NVMFS6H818NWFT1G | Sanyo Semiconductor/ON Semiconductor NVMFS6H818NWFT1G

NVMFS6H818NWFT1G

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Part Number	NVMFS6H818NWFT1G
LIXINC Part #	NVMFS6H818NWFT1G
Manufacturer	Sanyo Semiconductor/ON Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 80V 20A/123A 5DFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVMFS6H818NWFT1G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NVMFS6H818NWFT1G Specifications

Part Number:	NVMFS6H818NWFT1G
Brand:	Sanyo Semiconductor/ON Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Sanyo Semiconductor/ON Semiconductor
Series:	Automotive, AEC-Q101
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs:	46 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3100 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

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