TPN2010FNH,L1Q

TPN2010FNH,L1Q
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Part Number TPN2010FNH,L1Q
LIXINC Part # TPN2010FNH,L1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 5.6A 8TSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPN2010FNH,L1Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPN2010FNH,L1Q Specifications

Part Number:TPN2010FNH,L1Q
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 100 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 39W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN

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Quick Inquiry

In Stock 13230 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.65000$1.65
5000$0.66104$3305.2

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