TK65S04N1L,LQ | Toshiba Electronic Devices and Storage Corporation TK65S04N1L,LQ

TK65S04N1L,LQ

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Part Number	TK65S04N1L,LQ
LIXINC Part #	TK65S04N1L,LQ
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 40V 65A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK65S04N1L,LQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

TK65S04N1L,LQ Specifications

Part Number:	TK65S04N1L,LQ
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	65A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.3mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:	39 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2550 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	107W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK+
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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