TPN1R603PL,L1Q | Toshiba Electronic Devices and Storage Corporation TPN1R603PL,L1Q

TPN1R603PL,L1Q

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Part Number	TPN1R603PL,L1Q
LIXINC Part #	TPN1R603PL,L1Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 80A 8TSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPN1R603PL,L1Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TPN1R603PL,L1Q Specifications

Part Number:	TPN1R603PL,L1Q
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSIX-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:	41 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3900 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	104W (Tc)
Operating Temperature:	175°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSON Advance (3.3x3.3)
Package / Case:	8-PowerVDFN

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