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IPI65R660CFDXKSA1

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Part Number	IPI65R660CFDXKSA1
LIXINC Part #	IPI65R660CFDXKSA1
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 650V 6A TO262-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPI65R660CFDXKSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IPI65R660CFDXKSA1 Specifications

Part Number:	IPI65R660CFDXKSA1
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	CoolMOS™
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	22 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	615 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	62.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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