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FQI27N25TU

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Part Number	FQI27N25TU
LIXINC Part #	FQI27N25TU
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	POWER FIELD-EFFECT TRANSISTOR, 2
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FQI27N25TU PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FQI27N25TU Specifications

Part Number:	FQI27N25TU
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	QFET®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	65 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2.45 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.13W (Ta), 180W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK (TO-262)
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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