TK5Q65W,S1Q | Toshiba Electronic Devices and Storage Corporation TK5Q65W,S1Q

TK5Q65W,S1Q

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Part Number	TK5Q65W,S1Q
LIXINC Part #	TK5Q65W,S1Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 650V 5.2A IPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK5Q65W,S1Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

TK5Q65W,S1Q Specifications

Part Number:	TK5Q65W,S1Q
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	DTMOSIV
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.22Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:	10.5 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	380 pF @ 300 V
FET Feature:	-
Power Dissipation (Max):	60W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Stub Leads, IPak

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