SSM6J214FE(TE85L,F | Toshiba Electronic Devices and Storage Corporation SSM6J214FE(TE85L,F | SSM6J214FE(TE85L,F Inventory, Best Pricing

SSM6J214FE(TE85L,F

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Part Number	SSM6J214FE(TE85L,F
LIXINC Part #	SSM6J214FE(TE85L,F
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 30V 3.6A ES6
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SSM6J214FE(TE85L,F PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SSM6J214FE(TE85L,F Specifications

Part Number:	SSM6J214FE(TE85L,F
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVI
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 10V
Rds On (Max) @ Id, Vgs:	50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	7.9 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	560 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	ES6
Package / Case:	SOT-563, SOT-666

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