IPB120N10S403ATMA1

IPB120N10S403ATMA1
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Part Number IPB120N10S403ATMA1
LIXINC Part # IPB120N10S403ATMA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 120A D2PAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB120N10S403ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPB120N10S403ATMA1 Specifications

Part Number:IPB120N10S403ATMA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IR (Infineon Technologies)
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10120 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Quick Inquiry

In Stock 10843 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.34658$2.34658
1000$2.32320$2323.2

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