SSM3K35AMFV,L3F | Toshiba Electronic Devices and Storage Corporation SSM3K35AMFV,L3F

SSM3K35AMFV,L3F

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Part Number	SSM3K35AMFV,L3F
LIXINC Part #	SSM3K35AMFV,L3F
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 20V 250MA VESM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SSM3K35AMFV,L3F PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

SSM3K35AMFV,L3F Specifications

Part Number:	SSM3K35AMFV,L3F
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSIII
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	0.34 nC @ 4.5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	36 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	VESM
Package / Case:	SOT-723

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