TSM80N1R2CI C0G | TSC (Taiwan Semiconductor) TSM80N1R2CI C0G | TSM80N1R2CI C0G Inventory, Best Pricing

TSM80N1R2CI C0G

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Part Number	TSM80N1R2CI C0G
LIXINC Part #	TSM80N1R2CI C0G
Manufacturer	TSC (Taiwan Semiconductor)
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 800V 5.5A ITO220AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TSM80N1R2CI C0G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TSM80N1R2CI C0G Specifications

Part Number:	TSM80N1R2CI C0G
Brand:	TSC (Taiwan Semiconductor)
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	TSC (Taiwan Semiconductor)
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	19.4 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	685 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	25W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	ITO-220AB
Package / Case:	TO-220-3 Full Pack, Isolated Tab

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