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FQI17N08LTU

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Part Number	FQI17N08LTU
LIXINC Part #	FQI17N08LTU
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 80V 16.5A I2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FQI17N08LTU PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FQI17N08LTU Specifications

Part Number:	FQI17N08LTU
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	QFET®
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	100mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	11.5 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	520 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.75W (Ta), 65W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK (TO-262)
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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