BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1
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Part Number BSZ120P03NS3EGATMA1
LIXINC Part # BSZ120P03NS3EGATMA1
Manufacturer Rochester Electronics
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 11A/40A TSDSON-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSZ120P03NS3EGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSZ120P03NS3EGATMA1 Specifications

Part Number:BSZ120P03NS3EGATMA1
Brand:Rochester Electronics
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rochester Electronics
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3.36 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN

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In Stock 15502 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.24000$0.24
5000$0.24000$1200

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