BSZ031NE2LS5ATMA1

BSZ031NE2LS5ATMA1
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Part Number BSZ031NE2LS5ATMA1
LIXINC Part # BSZ031NE2LS5ATMA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 19A/40A TSDSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSZ031NE2LS5ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSZ031NE2LS5ATMA1 Specifications

Part Number:BSZ031NE2LS5ATMA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IR (Infineon Technologies)
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.3 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1230 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN

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In Stock 15523 - More on Order
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Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.19000$1.19
5000$0.47907$2395.35

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