IRLS3813PBF | Rochester Electronics IRLS3813PBF | IRLS3813PBF Inventory, Best Pricing

IRLS3813PBF

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Part Number	IRLS3813PBF
LIXINC Part #	IRLS3813PBF
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 160A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IRLS3813PBF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IRLS3813PBF Specifications

Part Number:	IRLS3813PBF
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	HEXFET®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.95mOhm @ 148A, 10V
Vgs(th) (Max) @ Id:	2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	83 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8.02 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	195W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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