IPD35N12S3L24ATMA1

IPD35N12S3L24ATMA1
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Part Number IPD35N12S3L24ATMA1
LIXINC Part # IPD35N12S3L24ATMA1
Manufacturer Rochester Electronics
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description IPD35N12 - 120V-300V N-CHANNEL A
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD35N12S3L24ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD35N12S3L24ATMA1 Specifications

Part Number:IPD35N12S3L24ATMA1
Brand:Rochester Electronics
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rochester Electronics
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.7 pF @ 25 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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Quick Inquiry

In Stock 14832 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.41000$0.41
2500$0.21361$534.025
5000$0.20292$1014.6
12500$0.19530$2441.25

Lixinc will offer the most competitive prices for you, please refer to the quotations.

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