TP89R103NL,LQ | Toshiba Electronic Devices and Storage Corporation TP89R103NL,LQ

TP89R103NL,LQ

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Part Number	TP89R103NL,LQ
LIXINC Part #	TP89R103NL,LQ
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N CH 30V 15A 8SOP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TP89R103NL,LQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TP89R103NL,LQ Specifications

Part Number:	TP89R103NL,LQ
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	9.1mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	9.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	820 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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