SSM3J112TU,LF | Toshiba Electronic Devices and Storage Corporation SSM3J112TU,LF

SSM3J112TU,LF

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Part Number	SSM3J112TU,LF
LIXINC Part #	SSM3J112TU,LF
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 30V 1.1A UFM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SSM3J112TU,LF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SSM3J112TU,LF Specifications

Part Number:	SSM3J112TU,LF
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	-
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	390mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:	1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	86 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	800mW (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	UFM
Package / Case:	3-SMD, Flat Lead

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