IPC70N04S5L4R2ATMA1 | IR (Infineon Technologies) IPC70N04S5L4R2ATMA1 | IPC70N04S5L4R2ATMA1 Inventory, Best Pricing

IPC70N04S5L4R2ATMA1

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Part Number	IPC70N04S5L4R2ATMA1
LIXINC Part #	IPC70N04S5L4R2ATMA1
Manufacturer	IR (Infineon Technologies)
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 40V 70A 8TDSON-34
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPC70N04S5L4R2ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 23 - Jan 27 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IPC70N04S5L4R2ATMA1 Specifications

Part Number:	IPC70N04S5L4R2ATMA1
Brand:	IR (Infineon Technologies)
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	IR (Infineon Technologies)
Series:	Automotive, AEC-Q101, OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	1600 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	50W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-34
Package / Case:	8-PowerTDFN

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