SSM3J325F,LF | Toshiba Electronic Devices and Storage Corporation SSM3J325F,LF

SSM3J325F,LF

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Part Number	SSM3J325F,LF
LIXINC Part #	SSM3J325F,LF
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 20V 2A S-MINI
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SSM3J325F,LF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

SSM3J325F,LF Specifications

Part Number:	SSM3J325F,LF
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVI
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	150mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	4.6 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	270 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	600mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	S-Mini
Package / Case:	TO-236-3, SC-59, SOT-23-3

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