2SC5200N(S1,E,S) | Toshiba Electronic Devices and Storage Corporation 2SC5200N(S1,E,S)

2SC5200N(S1,E,S)

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Part Number	2SC5200N(S1,E,S)
LIXINC Part #	2SC5200N(S1,E,S)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN 230V 15A TO-3PL
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	2SC5200N(S1,E,S) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 23 - Jan 27 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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2SC5200N(S1,E,S) Specifications

Part Number:	2SC5200N(S1,E,S)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	-
Package:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	15 A
Voltage - Collector Emitter Breakdown (Max):	230 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 800mA, 8A
Current - Collector Cutoff (Max):	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 1A, 5V
Power - Max:	150 W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P(N)

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